Rumors are flying around about Samsung's upcoming Galaxy S8. The latest news coming out of China concerns the RAM the device will have inside and the technology that will be used for it.
Until today, rumors had it that the upcoming Galaxy S8 would come with 6GB of RAM and 256GB of storage.
However, a new rumor originating from China claims the Galaxy S8 will be the world's first smartphone to feature 8GB of RAM.
According to the Chinese leakster, Samsung will start its own production of 8GB RAM using 10nm technology. He also mentions that the 256GB of internal memory will use UFS 2.1 flash storage technology.
UFS 2.1 flash storage technology will be an updated version of UFS 2.0, featuring key improvements over previous versions and providing data security using inline cryptography between the system-on-chip (SoC) and the UFS storage device.
The Galaxy S8 is supposed to be among the first devices to use Qualcomm's Snapdragon 835 processor, although rumors suggest that Qualcomm may not have the chipset ready until April.
It remains to be seen how many of the rumors will be confirmed at the end of February at the MWC 2017 trade show.
